India has the potential to disrupt the global semiconductor race and become a leader in post-silicon technologies by harnessing two-dimensional (2D) materials, according to a report released by government think-tank NITI Aayog.
The report highlights that the convergence of semiconductor policy and 2D materials research offers India a unique opportunity to achieve comprehensive technological advancement and take a leading position in next-generation technologies.
“2D materials research presents an opportunity for comprehensive technological advancement that could provide India an opportunity to disrupt the Semicon race,” NITI Aayog stated.
Explaining the concept, the report noted that 2D materials—crystalline substances just one to a few atomic layers thick—offer extraordinary electronic, optical, and mechanical properties compared to traditional 3D materials. Their applications could include ultra-thin foldable smartphones, energy-efficient CPUs and GPUs, and displays so thin they merge seamlessly with surfaces.
The report highlighted that 2D materials form the backbone of next-generation semiconductors, memory devices, quantum technologies, flexible electronics, and energy systems. Ultra-thin 2D transistors can operate at sub-0.3V thresholds, achieving 5-10 times lower power dissipation than current FinFETs. Additionally, 2D-based synaptic devices in neuromorphic chips can reduce chip area by over 40 per cent without affecting performance.
However, NITI Aayog cautioned that India’s work in mono-to-few-layer 2D materials remains at an early stage, with most research limited to material synthesis and basic device characterization. More work is needed in wafer-scale integration, heterostructure engineering, and deployable device prototypes.
The report concluded that leveraging 2D materials could redefine computing, enable energy-efficient AI, support compact wearable devices, and empower edge-AI and quantum-class processors—positioning India to potentially disrupt the global semiconductor landscape.
